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Anomalous temperature dependence of electroluminescence intensity in InGaN single quantum well diodes
http://hdl.handle.net/10228/402
http://hdl.handle.net/10228/4022ff1ec82-2f3d-46dd-bc82-ba6b4d7823c1
| 名前 / ファイル | ライセンス | アクション |
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ICDS21_KF__Physica-B,SQW-LED.pdf (519.0 kB)
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| Item type | 学術雑誌論文 = Journal Article(1) | |||||||||||||
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| 公開日 | 2007-11-26 | |||||||||||||
| 資源タイプ | ||||||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||||
| 資源タイプ | journal article | |||||||||||||
| タイトル | ||||||||||||||
| タイトル | Anomalous temperature dependence of electroluminescence intensity in InGaN single quantum well diodes | |||||||||||||
| 言語 | ||||||||||||||
| 言語 | eng | |||||||||||||
| 著者 |
Hori, A
× Hori, A× Yasunaga, D× 佐竹, 昭泰
WEKO
252
× 藤原, 賢三 |
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| 抄録 | ||||||||||||||
| 内容記述タイプ | Abstract | |||||||||||||
| 内容記述 | Temperature dependence of electroluminescence (EL) spectral intensity of the super-bright greenInGaN single quantum well (SQW) light emitting diodes (LED’s), fabricated by Nichia ChemicalIndustry Ltd, has been studied over a wide temperature range (T = 15-300 K) and as a function ofinjection current level. It is found that, when T is decreased slightly to 140 K, the EL intensity efficientlyincreases probably due to reduced non-raiative recombination processes and/or increased carrier captureby the localized radiative recombination centers. However, decreasing T, furthermore, down to 15 K, itdrastically decreases due to the reduced carrier capture and population, accompanying disappearance ofinjection current dependent line-shape changes (blue-shift) caused by band-filling of the localizedrecombination centers. These results indicate that the efficient carrier capture by SQW is crucial toenhance the radiative recombination of injected carriers in the presence of the high dislocation density. | |||||||||||||
| 書誌情報 |
Physica B: Condensed Matter 巻 308-310, p. 1193-1196, 発行日 2001-12 |
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| 出版社 | ||||||||||||||
| 出版者 | Elsevier | |||||||||||||
| DOI | ||||||||||||||
| 関連タイプ | isVersionOf | |||||||||||||
| 識別子タイプ | DOI | |||||||||||||
| 関連識別子 | https://doi.org/10.1016/S0921-4526(01)00939-5 | |||||||||||||
| ISSN | ||||||||||||||
| 収録物識別子タイプ | ISSN | |||||||||||||
| 収録物識別子 | 0921-4526 | |||||||||||||
| 著作権関連情報 | ||||||||||||||
| 権利情報 | Copyright (c) 2001 Elsevier Science B.V. | |||||||||||||
| キーワード | ||||||||||||||
| 主題Scheme | Other | |||||||||||||
| 主題 | Wide band gap semiconductors | |||||||||||||
| キーワード | ||||||||||||||
| 主題Scheme | Other | |||||||||||||
| 主題 | Electroluminescence | |||||||||||||
| キーワード | ||||||||||||||
| 主題Scheme | Other | |||||||||||||
| 主題 | Recombination | |||||||||||||
| 出版タイプ | ||||||||||||||
| 出版タイプ | AM | |||||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||||||||||
| 査読の有無 | ||||||||||||||
| 値 | yes | |||||||||||||
| 情報源 | ||||||||||||||
| 識別子タイプ | URI | |||||||||||||
| 関連識別子 | http://www.sciencedirect.com/science/journal/09214526 | |||||||||||||
| 関連名称 | http://www.sciencedirect.com/science/journal/09214526 | |||||||||||||
