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Electroluminescence efficiency of blue InGaN/GaN quantum-well diodes with and without an n-InGaN electron reservoir layer
http://hdl.handle.net/10228/535
http://hdl.handle.net/10228/5356dcbedc8-9331-473b-a472-22cbf8fca79f
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
1.2398690.pdf (501.2 kB)
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| アイテムタイプ | 学術雑誌論文 = Journal Article(1) | |||||
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| 公開日 | 2007-12-20 | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| タイトル | ||||||
| タイトル | Electroluminescence efficiency of blue InGaN/GaN quantum-well diodes with and without an n-InGaN electron reservoir layer | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 著者 |
Otsuji, N
× Otsuji, N× 藤原, 賢三× Sheu, J.K. |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | The temperature dependence of the electroluminescence (EL) spectral intensity has been investigated in detail between T=20 and 300 K at various injection current levels for a set of two blue InGaN/GaN multiple-quantum-well (MQW) light-emitting diodes (LEDs) with and without an additional n-doped In0.18Ga0.82N electron reservoir layer (ERL). The radiative recombination efficiency of the main blue emission band (~480 nm) is found to be significantly improved at all temperature regions and current levels when the additional ERL is introduced. For high injection currents If, i.e., large forward bias voltages Vf, a quenching of the EL intensity is observed for T<100 K for both LED structures, accompanying appearance of short-wavelength satellite emissions around 380–430 nm. Furthermore, the low-temperature intensity reduction of the main EL band is stronger for the LED without the ERL than with the ERL. For low If, i.e., small Vf, however, no quenching of the EL intensity is observed for both LEDs even below 100 K and the short-wavelength satellite emissions are significantly reduced. These results of the main blue emission and the short-wavelength satellite bands imply that the unusual evolution of the EL intensity with temperature and current is caused by variations of the actual potential field distribution due to both internal and external fields. They significantly influence the carrier capture efficiency by radiative recombination centers within the active MQW layer and the carrier escape out of the active regions into high-energy recombination centers responsible for the short-wavelength satellite emissions. | |||||
| 書誌情報 |
Journal of Applied Physics 巻 100, 号 11, p. 113105-1-113105-7, 発行日 2006-12-05 |
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| 出版社 | ||||||
| 出版者 | American Institute of Physics | |||||
| DOI | ||||||
| 関連タイプ | isIdenticalTo | |||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | https://doi.org/10.1063/1.2398690 | |||||
| NAID | ||||||
| 関連タイプ | isIdenticalTo | |||||
| 識別子タイプ | NAID | |||||
| 関連識別子 | 120002440717 | |||||
| 日本十進分類法 | ||||||
| 主題Scheme | NDC | |||||
| 主題 | 549 | |||||
| NCID | ||||||
| 収録物識別子タイプ | NCID | |||||
| 収録物識別子 | AA00693547 | |||||
| ISSN | ||||||
| 収録物識別子タイプ | PISSN | |||||
| 収録物識別子 | 0021-8979 | |||||
| 著作権関連情報 | ||||||
| 権利情報 | Copyright © 2006 American Institute of Physics. The following article has been submitted to/accepted by Journal of Applied Physics. After it is published, it will be found at https://aip.scitation.org/journal/jap. | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | indium compounds | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | wide band gap semiconductors | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | gallium compounds | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | III-V semiconductors | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | light emitting diodes | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | electroluminescence | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | radiation quenching | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | quantum well devices | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | semiconductor quantum wells | |||||
| 出版タイプ | ||||||
| 出版タイプ | VoR | |||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
| 査読の有無 | ||||||
| 値 | yes | |||||
