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アイテム
Observation of silicon front surface topographs of an ultralarge-scale-integrated wafer by synchrotron x-ray plane wave
http://hdl.handle.net/10228/4542
http://hdl.handle.net/10228/4542ebee05cf-95e2-46e4-99c5-983660bc36e8
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
20100203170619458.pdf (402.4 kB)
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| アイテムタイプ | 学術雑誌論文 = Journal Article(1) | |||||||||||||
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| 公開日 | 2010-02-03 | |||||||||||||
| 資源タイプ | ||||||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||||
| 資源タイプ | journal article | |||||||||||||
| タイトル | ||||||||||||||
| タイトル | Observation of silicon front surface topographs of an ultralarge-scale-integrated wafer by synchrotron x-ray plane wave | |||||||||||||
| 言語 | en | |||||||||||||
| 言語 | ||||||||||||||
| 言語 | eng | |||||||||||||
| 著者 |
鈴木, 芳文
× 鈴木, 芳文
WEKO
13047
× Tsukasaki, Yoshimitsu× Kajiwara, Kentaro× Kawado, Seiji× Iida, Satoshi× Chikaura, Yoshinori |
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| 抄録 | ||||||||||||||
| 内容記述タイプ | Abstract | |||||||||||||
| 内容記述 | Surface roughness and undulation of unpatterned silicon wafers are serious issues for ultralarge-scale-integrated circuit devices, even after fine mechanochemical polishing. It has never been clarified whether the undulations exist only on the surface or also exist inside the bulk crystal. We produced grazing incident diffraction topographs at three x-ray photon energies, with penetration depths estimated to be 3.85 nm, 4.78 nm, and 1.28 µm. All the topographs contained striation. We also obtained clear total reflection images using synchrotron x-ray plane waves, which also showed striation patterns at penetration depths from 3.85 nm to 1.28 µm. These results indicate that the origin of the patterns is not at the surface but is inside the Si wafer. The origin of striation patterns, observed in the topographs, was found not to be due to mechanochemical polishing processes but to crystal growth. | |||||||||||||
| 言語 | en | |||||||||||||
| 書誌情報 |
en : Journal of Applied Physics 巻 96, 号 11, p. 6259, 発行日 2004-12-01 |
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| 出版社 | ||||||||||||||
| 出版者 | American Institute of Physics | |||||||||||||
| 言語 | en | |||||||||||||
| DOI | ||||||||||||||
| 関連タイプ | isIdenticalTo | |||||||||||||
| 識別子タイプ | DOI | |||||||||||||
| 関連識別子 | https://doi.org/10.1063/1.1812354 | |||||||||||||
| ISSN | ||||||||||||||
| 収録物識別子タイプ | PISSN | |||||||||||||
| 収録物識別子 | 0021-8979 | |||||||||||||
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| 収録物識別子タイプ | EISSN | |||||||||||||
| 収録物識別子 | 1089-7550 | |||||||||||||
| 著作権関連情報 | ||||||||||||||
| 権利情報 | ©2004 American Institute of Physics | |||||||||||||
| キーワード | ||||||||||||||
| 主題Scheme | Other | |||||||||||||
| 主題 | silicon | |||||||||||||
| キーワード | ||||||||||||||
| 主題Scheme | Other | |||||||||||||
| 主題 | elemental semiconductors | |||||||||||||
| キーワード | ||||||||||||||
| 主題Scheme | Other | |||||||||||||
| 主題 | surface roughness | |||||||||||||
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| 主題Scheme | Other | |||||||||||||
| 主題 | chemical mechanical polishing | |||||||||||||
| キーワード | ||||||||||||||
| 主題Scheme | Other | |||||||||||||
| 主題 | integrated circuit technology | |||||||||||||
| キーワード | ||||||||||||||
| 主題Scheme | Other | |||||||||||||
| 主題 | X-ray diffraction | |||||||||||||
| 出版タイプ | ||||||||||||||
| 出版タイプ | VoR | |||||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||||||
| 査読の有無 | ||||||||||||||
| 値 | yes | |||||||||||||
| 業績ID | ||||||||||||||
| 値 | 2A50628E266FFF56492576BE000F8CD1 | |||||||||||||
