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13kV UHV-IGBT: Feasibility Study
http://hdl.handle.net/10228/00007992
http://hdl.handle.net/10228/0000799258b6b9f9-15b6-46c6-986f-1500620ee4f5
名前 / ファイル | ライセンス | アクション |
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nperc158.pdf (561.4 kB)
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Item type | 学術雑誌論文 = Journal Article(1) | |||||||||||
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公開日 | 2020-12-23 | |||||||||||
資源タイプ | ||||||||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||
資源タイプ | journal article | |||||||||||
タイトル | ||||||||||||
タイトル | 13kV UHV-IGBT: Feasibility Study | |||||||||||
言語 | ||||||||||||
言語 | eng | |||||||||||
著者 |
Ito, Atsushi
× Ito, Atsushi× 大村, 一郎
WEKO
16176
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抄録 | ||||||||||||
内容記述タイプ | Abstract | |||||||||||
内容記述 | Increasing the rated voltage of IGBTs is indispensable for realizing future energy transmission systems such as gigawatt-class UHVDC and high-power motor drives with reduced number of series connection or simplified circuit topology. The voltage of IGBTs, however, has stagnated for 20 years at 6.5kV because of several issues. In this paper, we investigated the feasibility of a 13kV ultra-high voltage IGBT with twice the breakdown voltage of conventional IGBTs using TCAD simulations. As a result, the use of a double gate structure proved to be practical under DC bus voltage of 6.6 kV and a switching frequency of 150 Hz. | |||||||||||
備考 | ||||||||||||
内容記述タイプ | Other | |||||||||||
内容記述 | 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD 2020), 13-18 September, 2020, Vienna, Austria (新型コロナ感染拡大に伴い、現地開催中止) | |||||||||||
書誌情報 |
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) 発行日 2020-08-18 |
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出版社 | ||||||||||||
出版者 | IEEE | |||||||||||
DOI | ||||||||||||
関連タイプ | isVersionOf | |||||||||||
識別子タイプ | DOI | |||||||||||
関連識別子 | https://doi.org/10.1109/ISPSD46842.2020.9170034 | |||||||||||
ISBN | ||||||||||||
識別子タイプ | ISBN | |||||||||||
関連識別子 | 978-1-7281-4836-6 | |||||||||||
ISBN | ||||||||||||
識別子タイプ | ISBN | |||||||||||
関連識別子 | 978-1-7281-4837-3 | |||||||||||
日本十進分類法 | ||||||||||||
主題Scheme | NDC | |||||||||||
主題 | 549 | |||||||||||
ISSN | ||||||||||||
収録物識別子タイプ | ISSN | |||||||||||
収録物識別子 | 1946-0201 | |||||||||||
ISSN | ||||||||||||
収録物識別子タイプ | ISSN | |||||||||||
収録物識別子 | 1063-6854 | |||||||||||
著作権関連情報 | ||||||||||||
権利情報 | Copyright (c) 2020 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. | |||||||||||
キーワード | ||||||||||||
主題Scheme | Other | |||||||||||
主題 | 13kV Si IGBT | |||||||||||
キーワード | ||||||||||||
主題Scheme | Other | |||||||||||
主題 | UHV IGBT | |||||||||||
キーワード | ||||||||||||
主題Scheme | Other | |||||||||||
主題 | Double gate | |||||||||||
キーワード | ||||||||||||
主題Scheme | Other | |||||||||||
主題 | TCAD simulations | |||||||||||
出版タイプ | ||||||||||||
出版タイプ | AM | |||||||||||
出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||||||||
査読の有無 | ||||||||||||
値 | yes | |||||||||||
連携ID | ||||||||||||
8515 |