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Unipolarization of ambipolar organic field effect transistors toward high-impedance complementary metal-oxide-semiconductor circuits
http://hdl.handle.net/10228/1256
http://hdl.handle.net/10228/1256a3aac362-fb69-4ccc-a1e5-5fd6199bf040
名前 / ファイル | ライセンス | アクション |
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1.2770963.pdf (318.7 kB)
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Item type | 学術雑誌論文 = Journal Article(1) | |||||||||||
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公開日 | 2009-02-05 | |||||||||||
資源タイプ | ||||||||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||
資源タイプ | journal article | |||||||||||
タイトル | ||||||||||||
言語 | en | |||||||||||
タイトル | Unipolarization of ambipolar organic field effect transistors toward high-impedance complementary metal-oxide-semiconductor circuits | |||||||||||
言語 | ||||||||||||
言語 | eng | |||||||||||
著者 |
高嶋, 授
× 高嶋, 授× Murasaki, Tsutomu× 永松, 秀一
WEKO
1670
× Morita, Takeomi× 金藤, 敬一 |
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抄録 | ||||||||||||
内容記述タイプ | Abstract | |||||||||||
内容記述 | Ambipolar organic field effect transistors (OFETs), consisting of a composite of polyhexylthiophene (PHT) and [6,6]-phenyl C61-butylic acid methyl ester (PCBM), was converted into a p- or n-type OFET by insertion of a thin tetracyanoquinodimethane (TCNQ) or tetrathiafluvalene (TTF) buffer layer. The interface in the Au/TCNQ/PHT:PCBM composite transports hole but blocks electron, while the transported carrier was switched to electron with insertion of a TTF layer. The selective transport is probably due to vacuum level matching or temporal doping. High impedance in a complementary metal-oxide-semiconductor inverter was demonstrated with unipolarized ambipolar FETs, resulting in a decrease in the through current. | |||||||||||
言語 | en | |||||||||||
書誌情報 |
en : Applied Physics Letters 巻 91, 号 07, p. 071905-1-071905-3, 発行日 2007-08-13 |
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言語 | en | |||||||||||
出版者 | American Institute of Physics | |||||||||||
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関連タイプ | isIdenticalTo | |||||||||||
識別子タイプ | DOI | |||||||||||
関連識別子 | info:doi/10.1063/1.2770963 | |||||||||||
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関連タイプ | isIdenticalTo | |||||||||||
識別子タイプ | URI | |||||||||||
関連識別子 | https://cir.nii.ac.jp/crid/1050282813886503936 | |||||||||||
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収録物識別子タイプ | NCID | |||||||||||
収録物識別子 | AA00543431 | |||||||||||
ISSN | ||||||||||||
収録物識別子タイプ | EISSN | |||||||||||
収録物識別子 | 1077-3118 | |||||||||||
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収録物識別子タイプ | PISSN | |||||||||||
収録物識別子 | 0003-6951 | |||||||||||
著作権関連情報 | ||||||||||||
権利情報 | Copyright (c) 2007 Applied of Institute of Physics | |||||||||||
出版タイプ | ||||||||||||
出版タイプ | VoR | |||||||||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||||
査読の有無 | ||||||||||||
値 | yes | |||||||||||
研究者情報 | ||||||||||||
https://hyokadb02.jimu.kyutech.ac.jp/html/217_ja.html | ||||||||||||
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33 | ||||||||||||
業績ID | ||||||||||||
0721FF5874389FA64925738B0034ED4F | ||||||||||||
著者別名 |