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Department of Electrical Engineering, Kyushu Institute of Technology, Kitakyushu 804-8550, Japan
Department of Electrical Engineering, Kyushu Institute of Technology, Kitakyushu 804-8550, Japan
Department of Electrical Engineering, Kyushu Institute of Technology, Kitakyushu 804-8550, Japan
Department of Electrical Engineering, Kyushu Institute of Technology, Kitakyushu 804-8550, Japan
Department of Electrical Engineering, Kyushu Institute of Technology, Kitakyushu 804-8550, Japan
School of Chemical Engineering, Seoul National University, Seoul 151-742, Korea
抄録
We measured angular distributions of HD and D2 molecules desorbed via the reactions H+D/Si 100 →HD abstraction ABS and H+D/Si 100 →D2 adsorption-induced-desorption AID , respectively. It was found that the angular distribution of HD molecules desorbed alongABS is broader than that of D2 molecules desorbed along AID, i.e., the former could be fit withcos2.0±0.2 , while the latter with cos5.0±0.5 . This difference of the angular distributions between thetwo reaction paths suggests that their dynamic mechanisms are different. The observed cos2 distribution for the ABS reaction was reproduced by the classical trajectory calculations over theLondon-Eyring-Polanyi-Sato potential-energy surfaces. The simulation suggests that the HDdesorption along the ABS path takes place along the direction of Si–D bonds, but the apparentangular distribution is comprised of multiple components reflecting the different orientations ofD-occupied Si dimers in the 2 1 and 1 2 double domain structures.
Angular distributions of H-induced HD and D2 desorptions from the Si(100) surfaces
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