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Cuinse2 Homojunction Diode Fabricated by Phosphorus OP9
http://hdl.handle.net/10228/1498
http://hdl.handle.net/10228/14983687dada-fb5f-4fdf-869d-3c577b765a25
名前 / ファイル | ライセンス | アクション |
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kohiki_12.pdf (47.2 kB)
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Item type | 学術雑誌論文 = Journal Article(1) | |||||
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公開日 | 2009-02-20 | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Cuinse2 Homojunction Diode Fabricated by Phosphorus OP9 | |||||
言語 | ||||||
言語 | eng | |||||
著者 |
古曵, 重美
× 古曵, 重美× Nishitani, M× Negami, T× Wada, T |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | Homojunction diodes were fabricated by doping of phosphorus to n-type Cu-In-Se thin films. The junction prepared by P implantation at the energy of 50 keV with the dose of 1 x 10(15) ions/cm 2 showed a rectification ratio of more than 100. Conduction in Cu-In-Se thin films, whose crystal structure is of the chalcopyrite type, changes from n- to p-type in such a way that group V elements (N, P, Sb, or Bi) substitute for Se in the film. | |||||
言語 | en | |||||
書誌情報 |
en : Applied Physics Letters 巻 62, 号 14, p. 1656-1657, 発行日 1993-04-05 |
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出版社 | ||||||
言語 | en | |||||
出版者 | American Institute of Physics | |||||
DOI | ||||||
関連タイプ | isIdenticalTo | |||||
識別子タイプ | DOI | |||||
関連識別子 | https://doi.org/10.1063/1.108617 | |||||
CRID | ||||||
関連タイプ | isIdenticalTo | |||||
識別子タイプ | URI | |||||
関連識別子 | https://cir.nii.ac.jp/crid/1570854177629091328 | |||||
NCID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA00543431 | |||||
ISSN | ||||||
収録物識別子タイプ | EISSN | |||||
収録物識別子 | 1077-3118 | |||||
ISSN | ||||||
収録物識別子タイプ | PISSN | |||||
収録物識別子 | 0003-6951 | |||||
著作権関連情報 | ||||||
権利情報 | Copyright © 1993 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | copper selenides | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | indium selenides | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | ternay compouds | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | p&minus | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | n junctions | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | ion implantation | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | phosphorus additions | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | crystal doping | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | iv characteristic | |||||
出版タイプ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
査読の有無 | ||||||
値 | yes | |||||
業績ID | ||||||
9EE5D07ED912CA85492575610020196A | ||||||
著者別名 |