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Improved recombination lifetime of photoexcited carriers in GaAs single quantum-well heterostructures confined by GaAs/AlAs short-period superlattices
http://hdl.handle.net/10228/1620
http://hdl.handle.net/10228/162022979033-96a9-4b1d-ad69-01c7b9836e4e
| 名前 / ファイル | ライセンス | アクション |
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fujiwara_17.pdf (202.6 kB)
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| アイテムタイプ | 学術雑誌論文 = Journal Article(1) | |||||
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| 公開日 | 2009-02-26 | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| タイトル | ||||||
| タイトル | Improved recombination lifetime of photoexcited carriers in GaAs single quantum-well heterostructures confined by GaAs/AlAs short-period superlattices | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 著者 |
藤原, 賢三
× 藤原, 賢三× Nakamura, A× Tokuda, Y× Nakayama, T× Hirai, M |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Photoluminescence (PL) decay time measurements at 77 and 300 K are reported from 6.1 nm GaAs single quantum well heterostructures (SQWH’s) confined by GaAs/AlAs short‐period superlattices (SPS’s) or ternary AlGaAs alloys with similar Al content, prepared by molecular beam epitaxy. The SQW PL intensity exhibits a single exponential decay with a time constant of 1.6 ns for SQWH’s confined by SPS’s and 0.3 ns for SQWH’s confined by AlGaAs alloys at 77 K. From comparison of the decay rates in both types of the sample, it is found that the radiative recombination efficiency is improved by a factor of about 6 in SPS confined SQWH’s. This higher efficiency is attributed to the improved heterointerfaces in addition to the enhanced radiative recombination rate due to the increased overlap of electron and hole wave functions in the narrow SQW. | |||||
| 言語 | en | |||||
| 書誌情報 |
en : Applied Physics Letters 巻 49, 号 18, p. 1193-1195, 発行日 1986-11-03 |
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| 出版社 | ||||||
| 出版者 | American Institute of Physics | |||||
| 言語 | en | |||||
| DOI | ||||||
| 関連タイプ | isIdenticalTo | |||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | https://doi.org/10.1063/1.97411 | |||||
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| 関連タイプ | isIdenticalTo | |||||
| 識別子タイプ | URI | |||||
| 関連識別子 | https://cir.nii.ac.jp/crid/1571417127582365824 | |||||
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| 収録物識別子タイプ | NCID | |||||
| 収録物識別子 | AA00543431 | |||||
| ISSN | ||||||
| 収録物識別子タイプ | EISSN | |||||
| 収録物識別子 | 1077-3118 | |||||
| ISSN | ||||||
| 収録物識別子タイプ | PISSN | |||||
| 収録物識別子 | 0003-6951 | |||||
| 著作権関連情報 | ||||||
| 権利情報 | Copyright © 1986 American Institute of Physics. This article may be downloaded for personal use only.Any other use requires prior permission of the author and the American Institute of Physics. | |||||
| 出版タイプ | ||||||
| 出版タイプ | VoR | |||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
| 査読の有無 | ||||||
| 値 | yes | |||||
| 業績ID | ||||||
| 値 | F0018D741D44674F49257569002BECE7 | |||||
