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Electron-beam-induced modifications of electronic properties in GaN-based quantum well structures
http://hdl.handle.net/10228/489
http://hdl.handle.net/10228/489fd9fc862-6a92-400a-8f56-a085ee176dc0
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
Cam-Paper.pdf (123.1 kB)
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| アイテムタイプ | 学術雑誌論文 = Journal Article(1) | |||||
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| 公開日 | 2007-12-11 | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| タイトル | ||||||
| タイトル | Electron-beam-induced modifications of electronic properties in GaN-based quantum well structures | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 著者 |
Jahn, U
× Jahn, U× Dhar, S× Waltereit, P× Kostial, H× Watson, IM× 藤原, 賢三 |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | The electronic properties of (In,Ga)N/GaN quantum wells fabricated by MOCVD vary significantly during investigations using low-energy electron beam irradiation (LEEBI) such as cathodoluminescence (CL) if a certain exposure dose is exceeded. For unintentionally doped structures, we observe a simultaneous LEEBI-induced activation of donors and acceptors. Thus, the resistivity of the layers is not varied, while the quantum efficiency and optical transition energy increases significantly by LEEBI. A p-n structure is turned towards flat band conditions during LEEBI indicating an electron beam induced passivation of acceptors in the p-type layer. | |||||
| 書誌情報 |
Institute of Physics conference series 巻 180, p. 337-340, 発行日 2003 |
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| 出版社 | ||||||
| 出版者 | IOP Publishing | |||||
| 著作権関連情報 | ||||||
| 権利情報 | Copyright (c) 2003 IOP Publishing Ltd | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | MG | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | IRRADIATION | |||||
| 出版タイプ | ||||||
| 出版タイプ | AM | |||||
| 出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||
| 査読の有無 | ||||||
| 値 | yes | |||||
| 情報源 | ||||||
| 識別子タイプ | URI | |||||
| 関連識別子 | http://www.iop.org/ | |||||
| 関連名称 | http://www.iop.org/ | |||||
