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“Design for EMI Suppression” During Reverse Recovery by 600V Lateral SOI PiN Diode with Traps
http://hdl.handle.net/10228/5775
http://hdl.handle.net/10228/5775c4202abc-2b24-4e95-849c-01972c6d9929
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
nperc36.pdf (300.5 kB)
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| Item type | 会議発表論文 = Conference Paper(1) | |||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 公開日 | 2016-09-13 | |||||||||||
| 資源タイプ | ||||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_5794 | |||||||||||
| 資源タイプ | conference paper | |||||||||||
| タイトル | ||||||||||||
| タイトル | “Design for EMI Suppression” During Reverse Recovery by 600V Lateral SOI PiN Diode with Traps | |||||||||||
| 言語 | en | |||||||||||
| 言語 | ||||||||||||
| 言語 | eng | |||||||||||
| 著者 |
Tsukuda, Masanori
× Tsukuda, Masanori× Imaki, Hironori× 大村, 一郎
WEKO
16176
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| 抄録 | ||||||||||||
| 内容記述タイプ | Abstract | |||||||||||
| 内容記述 | PiN diode design for oscillation-induced EMI suppression is proposed with novel structure. The proposed diode is lateral structure with traps using SOI substrate. Conventional PiN diode with vertical structure generates waveform oscillation and the oscillation lower power electronics system reliability. The design of proposed lateral structure with traps will contributes the performance improvement of all of bipolar power devices including IGBT. | |||||||||||
| 備考 | ||||||||||||
| 内容記述タイプ | Other | |||||||||||
| 内容記述 | 2014 International Conference on Solid State Devices and Materials, September 8, 2014, Tsukuba International Congress Center, Ibaraki, Japan | |||||||||||
| 書誌情報 |
2014 International Conference on Solid State Devices and Materials (SSDM 2014) 巻 N-2-3, p. 1010-1011, 発行日 2014-09 |
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| 出版社 | ||||||||||||
| 出版社 | SSDM Organizing Committee | |||||||||||
| 著作権関連情報 | ||||||||||||
| 権利情報 | IEEE | |||||||||||
| 出版タイプ | ||||||||||||
| 出版タイプ | AM | |||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||||||||
| 査読の有無 | ||||||||||||
| 値 | yes | |||||||||||
| 連携ID | ||||||||||||
| 値 | 5579 | |||||||||||
