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Effects of hydrogen in working gas on valence states of oxygen in sputter-deposited indium tin oxide thin films
http://hdl.handle.net/10228/00006229
http://hdl.handle.net/10228/000062292dc7db00-8716-4cae-98aa-09a4517b168b
| 名前 / ファイル | ライセンス | アクション |
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acsami2_3_663.pdf (706.7 kB)
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| アイテムタイプ | 学術雑誌論文 = Journal Article(1) | |||||
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| 公開日 | 2017-06-02 | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| タイトル | ||||||
| タイトル | Effects of hydrogen in working gas on valence states of oxygen in sputter-deposited indium tin oxide thin films | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 著者 |
Luo, Suning
× Luo, Suning× 古曵, 重美× Okada, Koichi× Kohno, Atsushi× Tajiri, Takayuki× Arai, Masao× Ishii, Satoshi× Sekiba, Daiichiro× Mitome, Masanori× Shoji, Fumiya |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | X-ray photoelectron spectroscopy (XPS) and Rutherford backscattering spectroscopy-elastic recoil detection analysis (RBS-ERDA) revealed that hydrogen in working gas for dc-plasma sputter deposition resided in indium tin oxide (ITO) films and generated the O(-) state seen as the suboxide-like O 1s peak in XPS. Growth of the suboxide-like O 1s peak was parallel with an increase of the resided hydrogen quantified by RBS-ERDA. The first-principles band structure calculation revealed that the electronic structure of In(2)O(3) crystal was realized typically for the most conductive as-deposited film grown in the gas containing hydrogen of 1%. The as-deposited film grown in the gas containing hydrogen of more than 1% exhibited rather high density but low mobility of carriers and showed the electronic structure above 4 eV originated from the O(-) state due to the resided hydrogen in addition to that of the most conducting one. Both well preserved In(2)O(3) band structure and proper concentration of the O(2-) vacancy are indispensable for achieving the highest conductivity; however, the O(-) state lowers efficiency of the carrier doping using the O(2-) vacancy in the lattice and increases density of the ionized scattering center for the carriers. | |||||
| 言語 | en | |||||
| 書誌情報 |
en : ACS Applied Materials & Interfaces 巻 2, 号 3, p. 663-668, 発行日 2010-02-15 |
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| 出版社 | ||||||
| 出版者 | American Chemical Society | |||||
| 言語 | en | |||||
| DOI | ||||||
| 関連タイプ | isVersionOf | |||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | https://doi.org/10.1021/am9006676 | |||||
| ISSN | ||||||
| 収録物識別子タイプ | PISSN | |||||
| 収録物識別子 | 1944-8244 | |||||
| ISSN | ||||||
| 収録物識別子タイプ | EISSN | |||||
| 収録物識別子 | 1944-8252 | |||||
| 著作権関連情報 | ||||||
| 権利情報 | American Chemical Society. This document is the unedited author's version of a Submitted Work that was subsequently accepted for publication in ACS Applied Materials & Interfaces, copyright © American Chemical Society after peer review. To access the final edited and published work, see http://pubs.acs.org/doi/abs/10.1021/am9006676%40proofing. | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | Hydrogen incorporation | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | Sputter-deposition | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | ITO thin film | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | X-ray photoelectron spectroscopy | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | Rutherford backscattering spectroscopy-elastic recoil detection analysis | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 出版タイプ | ||||||
| 出版タイプ | AM | |||||
| 出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||
| 査読の有無 | ||||||
| 値 | yes | |||||
| 研究者情報 | ||||||
| URL | https://hyokadb02.jimu.kyutech.ac.jp/html/102_ja.html | |||||
| 論文ID（連携） | ||||||
| 値 | 10020171 | |||||
| 連携ID | ||||||
| 値 | 5999 | |||||
