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Correlation between resistivity and oxygen vacancy of hydrogen-doped indium tin oxide thin films
http://hdl.handle.net/10228/00006434
http://hdl.handle.net/10228/000064346ee726ce-5d14-4707-b0db-e4d2864b6630
名前 / ファイル | ライセンス | アクション |
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Item type | 学術雑誌論文 = Journal Article(1) | |||||
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公開日 | 2017-11-15 | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
タイトル | ||||||
タイトル | Correlation between resistivity and oxygen vacancy of hydrogen-doped indium tin oxide thin films | |||||
言語 | ||||||
言語 | eng | |||||
著者 |
Okada, Koichi
× Okada, Koichi× 古曵, 重美× Luo, Suning× Sekiba, Daiichiro× Ishii, Satoshi× Mitome, Masanori× Kohno, Atsushi× Tajiri, Takayuki× Shoji, Fumiya |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | Thin films of indium tin oxide (ITO) sputter-deposited by dc-plasma containing deuterium on glass substrate without any heat treatments exhibited gradual lowering in electrical resistivity with increasing the deuterium content [D2] in plasma gas by 1% and then demonstrated a jump in resistivity by further increase of [D2] than 1%. X-ray photoelectron spectroscopy revealed that hydroxyl-bonded oxygen in ITO grew continuingly with [D2]. Deuterium positioned at the interstitial site increased almost quantitatively with increasing [D2]. Rutherford backscattering spectroscopy showed gradual reduction in the oxygen content of ITO with increasing [D2] by 1% and then demonstrated an abrupt increase of the oxygen content with the increase of [D2] than 1%. The films with [D2] < 1% were oxygen deficient, but those with [D2] > 1% were excess of oxygen. The most oxygen deficient film of [D2] = 1% was the most conductive. Behavior in the resistivity with [D2] looks parallel to that in the oxygen content. A lower resistivity of the films corresponded well to oxygen vacancy rather than hydrogen interstitial. | |||||
書誌情報 |
Thin Solid Films 巻 519, 号 11, p. 3557-3561, 発行日 2011-03-31 |
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出版社 | ||||||
出版者 | Elsevier | |||||
DOI | ||||||
関連タイプ | isVersionOf | |||||
識別子タイプ | DOI | |||||
関連識別子 | info:doi/10.1016/j.tsf.2011.01.249 | |||||
NCID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA00863068 | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 0040-6090 | |||||
著作権関連情報 | ||||||
権利情報 | Copyright (c) 2011 Elsevier B.V. All rights reserved. | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Interstitial hydrogen | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Oxygen vacancy | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Indium tin oxide thin films | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | X-ray photoelectron spectroscopy | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Rutherford backscattering spectroscopy | |||||
出版タイプ | ||||||
出版タイプ | AM | |||||
出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||
査読の有無 | ||||||
値 | yes | |||||
研究者情報 | ||||||
URL | https://hyokadb02.jimu.kyutech.ac.jp/html/102_ja.html | |||||
論文ID(連携) | ||||||
値 | 10020166 | |||||
連携ID | ||||||
値 | 262 | |||||
情報源 | ||||||
識別子タイプ | DOI | |||||
関連識別子 | https://doi.org/10.1016/j.tsf.2011.01.249 | |||||
関連名称 | https://doi.org/10.1016/j.tsf.2011.01.249 |