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Enhanced electrical conductivity of zinc oxide thin films by ion implantation of gallium, aluminum, and boron atoms
http://hdl.handle.net/10228/1496
http://hdl.handle.net/10228/14964d3505c9-0eae-4d05-9538-96e4327bda88
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
kohiki_10.pdf (2.1 MB)
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| アイテムタイプ | 学術雑誌論文 = Journal Article(1) | |||||
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| 公開日 | 2009-02-20 | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| タイトル | ||||||
| タイトル | Enhanced electrical conductivity of zinc oxide thin films by ion implantation of gallium, aluminum, and boron atoms | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 著者 |
古曵, 重美
× 古曵, 重美× Nishitani, Mikihiko× Wada, Takahiro |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Effect of ion implantation on the conductivity of zinc oxide was examined by using highly resistive zinc oxide thin films deposited by rf magnetron sputtering at room temperature to reduce the effect ot oxygen vacancies. With the doping by 1 X 10(17) atoms/cm2 gallium the conductivity is 1.0 X 10((3)/OMEGA cm for as-implanted film and it increases up to 3.7 X 10(3)/OMEGA cm, the highest conductivity reported for zinc oxide films. with raising the annealing temperature in either a nitrogen or oxygen atmosphere. The conductivity of aluminum-doped films is slightly lower than those of gallium-doped films. Among the elements gallium, aluminum, and boron, gallium is the most effective in enhancing the conductivity and boron is the least. The order of the effectiveness is explained by the electronegativity of the dopants. | |||||
| 書誌情報 |
Journal of Applied Physics 巻 75, 号 4, p. 2069-2072, 発行日 1994-02-15 |
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| 出版社 | ||||||
| 出版者 | American Institute of Physics | |||||
| DOI | ||||||
| 関連タイプ | isIdenticalTo | |||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | https://doi.org/10.1063/1.356310 | |||||
| NAID | ||||||
| 関連タイプ | isIdenticalTo | |||||
| 識別子タイプ | NAID | |||||
| 関連識別子 | 120002441237 | |||||
| NCID | ||||||
| 収録物識別子タイプ | NCID | |||||
| 収録物識別子 | AA00693547 | |||||
| ISSN | ||||||
| 収録物識別子タイプ | PISSN | |||||
| 収録物識別子 | 0021-8979 | |||||
| 著作権関連情報 | ||||||
| 権利情報 | Copyright © 1994 American Institute of Physics.This article may be downloaded for personal use only.Any other use requires prior permission of the author and the American Institute of Physics. | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | zinc oxides | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | thin films | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | electric conductivity | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | ion implantation | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | gallium ions | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | boron ions | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | aluminium ions | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | doped materials | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | enhancement | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | sputtered materials | |||||
| 出版タイプ | ||||||
| 出版タイプ | VoR | |||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
| 査読の有無 | ||||||
| 値 | yes | |||||
| 業績ID | ||||||
| 値 | E7FA3F273B5A445A492575610020166E | |||||
