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Low-Temperature Carrier Transport in Ionic-Liquid-Gated Hydrogen-Terminated Silicon
http://hdl.handle.net/10228/00006967
http://hdl.handle.net/10228/000069675ac154e3-f193-4c01-bbfd-9befa5433a24
名前 / ファイル | ライセンス | アクション |
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scunit-2017_15.pdf (851.8 kB)
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Item type | 学術雑誌論文 = Journal Article(1) | |||||||||||
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公開日 | 2018-11-15 | |||||||||||
資源タイプ | ||||||||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||
資源タイプ | journal article | |||||||||||
タイトル | ||||||||||||
言語 | en | |||||||||||
タイトル | Low-Temperature Carrier Transport in Ionic-Liquid-Gated Hydrogen-Terminated Silicon | |||||||||||
言語 | ||||||||||||
言語 | eng | |||||||||||
著者 |
Sasama, Yosuke
× Sasama, Yosuke× Yamaguchi, Takahide× 田中, 将嗣
WEKO
22595
× Takeya, Hiroyuki× Takano, Yoshihiko |
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抄録 | ||||||||||||
内容記述タイプ | Abstract | |||||||||||
内容記述 | We fabricated ionic-liquid-gated field-effect transistors on the hydrogen-terminated (111)-oriented surface of undoped silicon. Ion implantation underneath electrodes leads to good ohmic contacts, which persist at low temperatures down to 1.4 K. The sheet resistance of the channel decreases by more than five orders of magnitude as the gate voltage is changed from 0 to −1.6 V at 220 K. This is caused by the accumulation of hole carriers. The sheet resistance shows thermally activated behavior at temperatures below 10 K, which is attributed to hopping transport of the carriers. The activation energy decreases towards zero with increasing carrier density, suggesting the approach to an insulator–metal transition. We also report the variation of device characteristics induced by repeated sweeps of the gate voltage. | |||||||||||
書誌情報 |
Journal of the Physical Society of Japan 巻 86, 号 11, p. 114703-114703, 発行日 2017-11-15 |
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出版社 | ||||||||||||
出版者 | 日本物理学会 | |||||||||||
DOI | ||||||||||||
関連タイプ | isVersionOf | |||||||||||
識別子タイプ | DOI | |||||||||||
関連識別子 | https://doi.org/10.7566/JPSJ.86.114703 | |||||||||||
NCID | ||||||||||||
収録物識別子タイプ | NCID | |||||||||||
収録物識別子 | AA00704814 | |||||||||||
ISSN | ||||||||||||
収録物識別子タイプ | EISSN | |||||||||||
収録物識別子 | 1347-4073 | |||||||||||
ISSN | ||||||||||||
収録物識別子タイプ | PISSN | |||||||||||
収録物識別子 | 0031-9015 | |||||||||||
著作権関連情報 | ||||||||||||
権利情報 | Copyright (c) 2017 The Physical Society of Japan | |||||||||||
出版タイプ | ||||||||||||
出版タイプ | AM | |||||||||||
出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||||||||
査読の有無 | ||||||||||||
値 | yes | |||||||||||
研究者情報 | ||||||||||||
https://hyokadb02.jimu.kyutech.ac.jp/html/100001006_ja.html | ||||||||||||
論文ID(連携) | ||||||||||||
10308970 | ||||||||||||
連携ID | ||||||||||||
6333 |