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Structure-based capacitance modeling and power loss analysis for the latest high-performance slant field-plate trench MOSFET
http://hdl.handle.net/10228/00007093
http://hdl.handle.net/10228/00007093ccb1e110-22a9-43d0-95d2-f03d123f7db9
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
nperc105.pdf (1.8 MB)
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| アイテムタイプ | 学術雑誌論文 = Journal Article(1) | |||||||||||||
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| 公開日 | 2019-03-25 | |||||||||||||
| 資源タイプ | ||||||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||||
| 資源タイプ | journal article | |||||||||||||
| タイトル | ||||||||||||||
| タイトル | Structure-based capacitance modeling and power loss analysis for the latest high-performance slant field-plate trench MOSFET | |||||||||||||
| 言語 | en | |||||||||||||
| 言語 | ||||||||||||||
| 言語 | eng | |||||||||||||
| 著者 |
Kobayashi, Kenya
× Kobayashi, Kenya× Sudo, Masaki× 大村, 一郎
WEKO
16176
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| 抄録 | ||||||||||||||
| 内容記述タイプ | Abstract | |||||||||||||
| 内容記述 | Field-plate trench MOSFETs (FP-MOSFETs), with the features of ultralow on-resistance and very low gate–drain charge, are currently the mainstream of high-performance applications and their advancement is continuing as low-voltage silicon power devices. However, owing to their structure, their output capacitance (Coss), which leads to main power loss, remains to be a problem, especially in megahertz switching. In this study, we propose a structure-based capacitance model of FP-MOSFETs for calculating power loss easily under various conditions. Appropriate equations were modeled for Coss curves as three divided components. Output charge (Qoss) and stored energy (Eoss) that were calculated using the model corresponded well to technology computer-aided design (TCAD) simulation, and we validated the accuracy of the model quantitatively. In the power loss analysis of FP-MOSFETs, turn-off loss was sufficiently suppressed, however, mainly Qoss loss increased depending on switching frequency. This analysis reveals that Qoss may become a significant issue in next-generation high-efficiency FP-MOSFETs. | |||||||||||||
| 言語 | en | |||||||||||||
| 書誌情報 |
en : Japanese Journal of Applied Physics 巻 57, 号 4S, p. 04FR14, 発行日 2018-03-23 |
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| 出版社 | ||||||||||||||
| 出版者 | 応用物理学会 | |||||||||||||
| DOI | ||||||||||||||
| 関連タイプ | isVersionOf | |||||||||||||
| 識別子タイプ | DOI | |||||||||||||
| 関連識別子 | https://doi.org/10.7567/JJAP.57.04FR14 | |||||||||||||
| NCID | ||||||||||||||
| 収録物識別子タイプ | NCID | |||||||||||||
| 収録物識別子 | AA12295836 | |||||||||||||
| ISSN | ||||||||||||||
| 収録物識別子タイプ | PISSN | |||||||||||||
| 収録物識別子 | 0021-4922 | |||||||||||||
| ISSN | ||||||||||||||
| 収録物識別子タイプ | EISSN | |||||||||||||
| 収録物識別子 | 1347-4065 | |||||||||||||
| 著作権関連情報 | ||||||||||||||
| 権利情報 | Copyright (c) 2018 The Japan Society of Applied Physics | |||||||||||||
| 出版タイプ | ||||||||||||||
| 出版タイプ | AM | |||||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||||||||||
| 査読の有無 | ||||||||||||||
| 値 | yes | |||||||||||||
| 連携ID | ||||||||||||||
| 値 | 6787 | |||||||||||||
