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Numerical Study of 4H-SiC PiN Diode to Enable Forward Bias Degradation Prediction Considering BPD-TED Conversion Position in the SiC Epitaxial Wafer
http://hdl.handle.net/10228/00007505
http://hdl.handle.net/10228/00007505e34eab06-fb15-487c-885c-107f3004afb6
| 名前 / ファイル | ライセンス | アクション |
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nperc130.pdf (855.1 kB)
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| アイテムタイプ | 会議発表論文 = Conference Paper(1) | |||||||||||
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| 公開日 | 2020-01-06 | |||||||||||
| 資源タイプ | ||||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_5794 | |||||||||||
| 資源タイプ | conference paper | |||||||||||
| タイトル | ||||||||||||
| タイトル | Numerical Study of 4H-SiC PiN Diode to Enable Forward Bias Degradation Prediction Considering BPD-TED Conversion Position in the SiC Epitaxial Wafer | |||||||||||
| 言語 | en | |||||||||||
| 言語 | ||||||||||||
| 言語 | eng | |||||||||||
| 著者 |
Torimi, Satoshi
× Torimi, Satoshi× Obiyama, Yoshiki× Tsukuda, Masanori× 大村, 一郎
WEKO
16176
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| 抄録 | ||||||||||||
| 内容記述タイプ | Abstract | |||||||||||
| 内容記述 | Forward bias degradation caused by basal plane dislocations (BPDs) in the substrate is the critical issue in the Sic bipolar devices operated under high current density conditions. In this work, we proposed the calculation model of the current density in the PiN diode using the injection hole density at the buffer/substrate interface to enable the forward bias degradation prediction. We found out the critical current density which occurs stacking faults expansion from BPDs at buffer/substrate interface could be improved by shortening the carrier lifetime of the substrate or densifying the dopant concentration of the buffer layer. In the case of the conversion of BPD to threading edge dislocation (TED) located inside the Sic substrate, we estimated more than twice improvement of critical current density using the BPD-TED conversion effect of the Si-vapor etching process. | |||||||||||
| 備考 | ||||||||||||
| 内容記述タイプ | Other | |||||||||||
| 内容記述 | International Conference on Solid State Devices and Materials (SSDM2019), September 2-5, 2019, Nagoya University, Japan | |||||||||||
| 書誌情報 |
2019 International Conference on Solid State Devices and Materials (SSDM2019) p. PS-4-05, 発行日 2019-09-04 |
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| 出版社 | ||||||||||||
| 出版社 | 応用物理学会 | |||||||||||
| URI | ||||||||||||
| 識別子タイプ | URI | |||||||||||
| 関連識別子 | http://www.ssdm.jp/2019/index.html | |||||||||||
| 著作権関連情報 | ||||||||||||
| 権利情報 | The copyright of this paper belongs to The Japan Society of Applied Physics. Copyright (c) 2019 The Japan Society of Applied Physics | |||||||||||
| 出版タイプ | ||||||||||||
| 出版タイプ | AM | |||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||||||||
| 査読の有無 | ||||||||||||
| 値 | yes | |||||||||||
| 連携ID | ||||||||||||
| 値 | 8022 | |||||||||||
